small signal switching diodes BAQ33 - baq35 thermal characteristics t amb = 25 c, unless otherwise specified parameter test condition part symbol value unit reverse voltage BAQ33 v r 30 v baq34 v r 60 v baq35 v r 125 v peak forward surge current t p = 1 s i fsm 2a forward current i f 200 ma parameter test condition symbol value unit thermal resistance junction to ambient air on pc board 50 mm x 50 mm x 1.6 mm r thja 500 k/w junction temperature t j 175 c storage temperature range t stg - 65 to + 175 c silicon planar diodes very low reverse current ! ! electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition part symbol min ty p. max unit forward voltage i f = 100 ma v f 1v reverse current e 300 lx, rated v r i r 13na e 300 lx, rated v r , t j = 125 c i r 0.5 a e 300 lx, v r = 15 v BAQ33 i r 0.5 1 na e 300l x, v r = 30 v baq34 i r 0.5 1 na e 300 lx, v r = 60 v baq35 i r 0.5 1 na breakdown voltage i r = 5 a, t p /t = 0.01, t p = 0.3 ms BAQ33 v (br) 40 v i r = 5 a, t p /t = 0.01, t p = 0.3 ms baq34 v (br) 70 v baq35 v (br) 140 v diode capacitance v r = 0, f = 1 mhz c d 3pf maximum ratings @ t a = 25c unless otherwise specified 1 of 2 www.sunmate.tw case: sod-80/ll34, glass terminals: solderable per mil-std-202, method 208 polarity: cathode band weight: 0.05 grams (approx.) mechanical data ! ! ! ! ! ll34/ sod-80 a c b dim min max a 3.30 3.70 b 1.30 1.60 c 0.28 0.50 all dimensions in mm features
typical characteri stics (tamb = 25 c unless otherwise specified) figure 1. reverse current vs. junction temperature figure 2. forward current vs. forward voltage 040 8 0 120 160 1 10 100 1000 10000 i - rever s ec u rrent (na) r t j -j u nction temper a t u re (c) 200 94 9079 s c a ttering limit v r =v rrm 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 i - forward current (ma) f v f - forward voltage (v) 2.0 94 9078 scattering limit t j =25 c 2 of 2 www.sunmate.tw
|
